Semiconductor Surfaces and Interfaces deals with structural and electronic properties of semiconductor surfaces and interfaces. The first part introduces the general aspects of space-charge layers, of clean-surface and adatom-induced surfaces states, and of interface states. It is followed by a presentation of experimental results on clean and adatom-covered surfaces which are explained in terms of simple physical and chemical concepts. Where available, results of more refined calculations are considered. This third edition has been thoroughly revised and updated. In particular it now includes an extensive discussion of the band lineup at semiconductor interfaces. The unifying concept is the continuum of interface-induced gap states.

1. Introduction

2. Surface Space-Charge Region in Thermal Equilibrium
3. Surface States
4. Occupation of Surface States and Surface Band-Bending in Thermal Equilibrium
5. Surface S pace-Charge Region in Non-Equilibrium
6. Interface States
7. Cleaved {110} Surfaces of III-V and II-VI Compound Semiconductors
8. {100} Surfaces of III-V, II-VI, and I-VII Compound Semiconductors with Zincblende Structure
9. {100} Surfaces of Diamond, Silicon, Germanium, and Cubic Silicon Carbide
10. Diamond, Silicon, and Germanium {111}-2 × 1 Surfaces
11. Si(111)-7 × 7 and Ge(111)-c(2 × 8) Surfaces
12. Phase Transitions on Silicon and Germanium {111} Surfaces
13. {111} Surfaces of Compounds with Zincblende Structure
14. Monovalent Adatoms
15. Group-III Adatoms on Silicon Surfaces
16. Group-V Adatoms
17. Oxidation of Silicon and III-V Compound Semiconductors
18. Surface Passivation by Adsorbates and Surfactants
19. Semiconductor Interfaces
References
Index of Reconstructions and Adsorbates.